Mosfet IRF640N TO-220AB®

The IRF640N TO-220AB® is a high-voltage, N-channel MOSFET designed for use in a wide range of applications, including power management, motor control, and automotive. It features a maximum drain-to-source voltage (VDS) of 600V and a maximum drain current (ID) of 17A. The IRF640N is also available in a surface-mount (SMD) package, the IRF640NS.

**Specifications:**

* VDS: 600V

* ID: 17A

* RDS(on): 0.19Ω

* Qg: 18nC

* Qgs: 4.5nC

* Qgd: 11nC

* BVdss: 650V

**Features:**

* High voltage rating: 600V

* Low on-resistance: 0.19Ω

* Fast switching speed: tRR = 30ns

* Low gate charge: Qg = 18nC

* RoHS compliant

**Benefits:**

* Reduced power dissipation

* Improved efficiency

* Smaller size and weight

* Increased reliability

**Applications:**

* Power management

* Motor control

* Automotive

* Switching power supplies

* DC-DC converters

* Inverters